Terahertz light amplification of stimulated emission of radiation in current-injection graphene channel transistor

S. Boubanga-Tombet, D. Yadav, T. Watanabe, A. Satou, W. Knap, V. V. Popov, V. Ryzhii, T. Otsuji

研究成果: Conference contribution

抄録

Linear and gapless energy spectrum of graphene carriers enables population inversion under optical and electrical pumping. We first theoretically discovered this phenomenon and demonstrated experimental observation of single-mode THz lasing with rather weak intensity at 100K in current-injection pumped graphene-channel field-effect transistors (GFETs). We introduce graphene surface plasmon polariton (SPP) instability to substantially boost the THz gain. We demonstrate our experimental observation of giant amplification of THz radiation at 300K stimulated by graphene plasmon instabilities in asymmetric dual-grating gate (ADGG) GFETs. Integrating the graphene SPP amplifier into a GFET laser will be a promising solution towards room-temperature intense THz lasing.

本文言語English
ホスト出版物のタイトルMicro- and Nanotechnology Sensors, Systems, and Applications XI
編集者Thomas George, M. Saif Islam
出版社SPIE
ISBN(電子版)9781510626294
DOI
出版ステータスPublished - 2019
イベント2019 Micro- and Nanotechnology (MNT) Sensors, Systems, and Applications XI Conference - Baltimore, United States
継続期間: 2019 4 142019 4 18

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
10982
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

Conference

Conference2019 Micro- and Nanotechnology (MNT) Sensors, Systems, and Applications XI Conference
国/地域United States
CityBaltimore
Period19/4/1419/4/18

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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