Terahertz imaging with InP high-electron-mobility transistors

Takayuki Watanabe, Keisuke Akagawa, Yudai Tanimoto, Dominique Coquillat, Wojciech Knap, Taiichi Otsuji

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

In this work, the performance of InP-based HEMTs as a THz detector was experimentally studied. The nature of the THz rectification by the two-dimensional plasmons in which the DC drain current variation ΔI d becomes maximal around the threshold voltage was observed. Based on the imaging measurement, it was confirmed that our HEMTs device can work for sensitive THz imaging at 0.3 THz. The directivity of the detector was characterized with the maximum responsivity of 26.1 V/W at θ = 160 degrees.

本文言語English
ホスト出版物のタイトルTerahertz Physics, Devices, and Systems V
ホスト出版物のサブタイトルAdvance Applications in Industry and Defense
DOI
出版ステータスPublished - 2011
イベントTerahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense - Orlando, FL, United States
継続期間: 2011 4 252011 4 26

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
8023
ISSN(印刷版)0277-786X

Other

OtherTerahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
国/地域United States
CityOrlando, FL
Period11/4/2511/4/26

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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