Terahertz emission in an InGaAs-based dual-grating-gate high-electron-mobility transistor plasmonic photomixer

Tomotaka Hosotani, Akira Satou, Taiichi Otsuji

研究成果: Article査読

抄録

We report on terahertz (THz) emission from an InGaAs-based DC-current-driven dual-grating-gate high-electron-mobility transistor excited by photomixed dual continuous-wave-infrared (dual-CW-IR) laser irradiation. The difference frequency (δf ) of the dual-CW-IR laser beams was set around the THz plasmon mode frequencies at different bias conditions. The radiation spectra from the device observed at 120 K showed distinctive emissions beyond the black-body radiation, which were promoted by δf-dependent coherent plasmons. The results suggest the occurrence of plasmonic boom instability stimulated by the DC current flow in the 2D channel under pertinent DC bias voltages.

本文言語English
論文番号051001
ジャーナルApplied Physics Express
14
5
DOI
出版ステータスPublished - 2021 5

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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