Terahertz emission from an asymmetric dual-grating-gate InGaAs high-electron-mobility transistor stimulated by plasmonic boom instability

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Asymmetric dual-grating-gate InGaAs high-electron-mobility transistors (ADGG-HEMTs) are studied as plasmonic terahertz (THz) emitters. We experimentally observed THz emission from a fabricated device at 110K. The spectra showed a broadband resonant emission under low d.c. channel currents reflecting radiation decay of thermally excited plasmons. With increasing the current and longitudinal electric field the emission was enhanced in a narrower spectral range suggesting promotion of plasmonic instability. Its threshold behavior suggests the occurrence of plasmonic-boom-type instability.

本文言語English
ホスト出版物のタイトルIRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
出版社IEEE Computer Society
ISBN(電子版)9781538682852
DOI
出版ステータスPublished - 2019 9
イベント44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, France
継続期間: 2019 9 12019 9 6

出版物シリーズ

名前International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2019-September
ISSN(印刷版)2162-2027
ISSN(電子版)2162-2035

Conference

Conference44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
国/地域France
CityParis
Period19/9/119/9/6

ASJC Scopus subject areas

  • エネルギー工学および電力技術
  • 電子工学および電気工学

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