Temperature induced complementary switching in titanium oxide resistive random access memory

D. Panda, F. M. Simanjuntak, T. Y. Tseng

研究成果: Article査読

28 被引用数 (Scopus)

抄録

On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

本文言語English
論文番号075314
ジャーナルAIP Advances
6
7
DOI
出版ステータスPublished - 2016 7月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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