Temperature-independent transport in high-mobility dinaphtho-thieno- thiophene (DNTT) single crystal transistors

Wei Xie; Kristin Willa; Yanfei Wu; Roger Häusermann; Kazuo Takimiya; Bertram Batlogg; C. Daniel Frisbie

doi:10.1002/adma.201300886

Temperature-independent transport in high-mobility dinaphtho-thieno- thiophene (DNTT) single crystal transistors

Wei Xie, Kristin Willa, Yanfei Wu, Roger Häusermann, Kazuo Takimiya, Bertram Batlogg, C. Daniel Frisbie

研究成果: Article › 査読

112 被引用数 (Scopus)

抄録

The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm² V^-1 s^-1. Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.

本文言語	English
ページ（範囲）	3478-3484
ページ数	7
ジャーナル	Advanced Materials
巻	25
号	25
DOI	https://doi.org/10.1002/adma.201300886
出版ステータス	Published - 2013 7月 5
外部発表	はい

ASJC Scopus subject areas

材料科学（全般）
材料力学
機械工学

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10.1002/adma.201300886

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AU - Xie, Wei

AU - Willa, Kristin

AU - Wu, Yanfei

AU - Häusermann, Roger

AU - Takimiya, Kazuo

AU - Batlogg, Bertram

AU - Frisbie, C. Daniel

PY - 2013/7/5

Y1 - 2013/7/5

N2 - The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm2 V-1 s-1. Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.

AB - The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm2 V-1 s-1. Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.

KW - DNTT single crystals

KW - temperature independent transport

KW - trap density of states

KW - weak mobility anisotropy

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Temperature-independent transport in high-mobility dinaphtho-thieno- thiophene (DNTT) single crystal transistors

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