Temperature evolution of spin-polarized electron tunneling in silicon nanowire-permalloy lateral spin valve system

Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, Yoshi Chika Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda

研究成果: Article査読

5 被引用数 (Scopus)

抄録

A huge nonlocal spin valve signal over 700Ω has been observed in silicon-nanowire-based lateral spin valve with permalloy electrodes. The magnitude of the observed huge spin signal was quantitatively explained using the conventional spin diffusion model in a one-dimensionally confined silicon channel. From the temperature dependence of the spin signal, the interface spin polarization was found to be strongly depolarized by raising the temperature. This special characteristic can be reasonably explained by considering an increase in the tunneling of thermally activated electrons through the Schottky barrier with an extremely thin depletion layer.

本文言語English
論文番号45001
ジャーナルApplied Physics Express
5
4
DOI
出版ステータスPublished - 2012 4
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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