Temperature-dependent contrasts of lateral p+-n junctions on H/Si(100) imaged with photoemission electron microscopy

Hirokazu Fukidome, Masamichi Yoshimura, Kazuyuki Ueda

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The temperature dependence of contrasts on a H/Si(100) surface with lateral p+-n junctions has been studied for the first time by photoemission electron microscopy. It is found that the intensity ratio of photoelectrons from the p+-region to that from the n-region varies with temperature. This temperature dependence arises mainly from the change in the band bending of n-region. The change can be qualitatively explained by the balance between the higher pinned position of Fermi level induced by hydrogen-termination and surface photovoltage, followed with the further shift of the pinned Fermi level to intrinsic one at higher temperatures.

本文言語English
ページ(範囲)L1417-L1419
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
46-49
DOI
出版ステータスPublished - 2005 11月 25
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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