Temperature-dependent contrasts of lateral p⁺-n junctions on H/Si(100) imaged with photoemission electron microscopy

The temperature dependence of contrasts on a H/Si(100) surface with lateral p⁺-n junctions has been studied for the first time by photoemission electron microscopy. It is found that the intensity ratio of photoelectrons from the p⁺-region to that from the n-region varies with temperature. This temperature dependence arises mainly from the change in the band bending of n-region. The change can be qualitatively explained by the balance between the higher pinned position of Fermi level induced by hydrogen-termination and surface photovoltage, followed with the further shift of the pinned Fermi level to intrinsic one at higher temperatures.