Temperature-dependent carbon incorporation into the Si 1-y C y film during gas-source molecular beam epitaxy using monomethylsilane

A. Konno, K. Senthil, T. Murata, M. Suemitsu

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Coverage and adsorption state of hydrogen atoms on the growing surface of Si 1-y C y film using monomethylsilane has been investigated by using temperature-programmed desorption (TPD) and multiple-internal- reflection Fourier-transform infrared spectroscopy (MIR-FT-IR). The surface hydrogen coverage decreases with the growth temperature T g until it disappears at 800 °C. All the H 2 -TPD spectra are well resolved into six SiH-related and one CH n -related hydrogen desorption peaks. The SiH-related FT-IR peak showed a blue shift with increasing T g , which, in conjunction with the TPD, is related to enhanced C incorporation at backbonds of SiH.

本文言語English
ページ(範囲)3692-3696
ページ数5
ジャーナルApplied Surface Science
252
10
DOI
出版ステータスPublished - 2006 3 15

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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