Coverage and adsorption state of hydrogen atoms on the growing surface of Si 1-y C y film using monomethylsilane has been investigated by using temperature-programmed desorption (TPD) and multiple-internal- reflection Fourier-transform infrared spectroscopy (MIR-FT-IR). The surface hydrogen coverage decreases with the growth temperature T g until it disappears at 800 °C. All the H 2 -TPD spectra are well resolved into six SiH-related and one CH n -related hydrogen desorption peaks. The SiH-related FT-IR peak showed a blue shift with increasing T g , which, in conjunction with the TPD, is related to enhanced C incorporation at backbonds of SiH.
ASJC Scopus subject areas
- 化学 (全般)