Temperature dependence of the D-H replacement rates in D-implanted oxide ceramics exposed to H2O vapor

K. Morita, B. Tsuchiya, S. Nagata, K. Katahira, M. Yoshino, Y. Arita, T. Ishijima, H. Sugai

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Temperature dependence of the D-H replacement rates in D-implanted BaCe0.9Y0.1O3-δ exposed to H2O vapor has been studied by means of the ERD technique with MeV He+ ion beam. It is found that the decay constant of D, namely D-H replacement rate increases monotonically as the specimen temperature is elevated from the implantation (room) temperature up to 50 °C. The concentration of H absorbed in the specimen by the D-H replacement is also found to be almost comparable to the implantation concentration of D, while the concentration of D implanted and H absorbed by the D-H replacement are reduced when the specimen is annealed in the vacuum. The apparent activation energy for the decay constant of D at elevated temperatures is found to be 0.70 eV, which is considerably higher than the one which is expected to be obtained at cooling temperatures below the implantation temperature. No reduction in the concentration of H absorbed by the D-H replacement is ascribed to enough fast absorption of H due to splitting of H2O at the surface, in comparison with thermal release of D and H. The higher activation energy for the decay constant of D is also ascribed to the contribution of thermal detrapping to emission of D2 and HD due to the local molecular recombination of D and H detrapped thermally with D and H in traps.

本文言語English
ページ(範囲)282-286
ページ数5
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
258
1
DOI
出版ステータスPublished - 2007 5月

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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