Temperature dependence of oxidation-induced changes of work function on Si(001)2 × 1 surface studied by real-time ultraviolet photoelectron spectroscopy

研究成果: Article査読

25 被引用数 (Scopus)

抄録

At the initial stage of oxidation on a Si(001)2 × 1 surface, real-time ultraviolet photoelectron spectroscopy revealed that the O 2 dosage dependences of band bending and work function due to a surface dipole layer show a distinct change with increasing temperature from 300 to 600°C in a Langmuir-type adsorption region, while oxygen uptake curves are almost the same at all temperatures examined. In constant to a dual-oxide-species (DOS) model in which the surface migration of adsorbed oxygen is not considered for Langmuir-type adsorption, the observed changes in work function due to the surface dipole layer mean that adsorbed oxygen can migrate on the surface more frequently with increasing temperature, leading to a decrease in the number of adsorbed oxygen atoms bonded at dimer backbond centers and furthermore a significant structural change of the oxide layer.

本文言語English
ページ(範囲)L1048-L1051
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
33-36
DOI
出版ステータスPublished - 2005 8 26

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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