The temperature dependence of band gap energies of GaAsN alloys was studied with absorption measurements. As the N concentration in GaAsN increased, the temperature dependence of the band gap energy was clearly reduced in comparison with that of GaAs. The redshift of the absorption edge in GaAsN for the temperature increase from 25 to 297 K was reduced to 60% of that of GaAs for the N concentration larger than ∼1%. The differential temperature coefficient of the energy gap at room temperature was also reduced to 70% of that of GaAs. The main factor for this reduced temperature dependence in GaAsN was attributed to the transition from band-like states to nitrogen-related localized states with detailed studies of the temperature-induced shift of the absorption edge.
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