TEMPERATURE DEPENDENCE OF AMORPHIZATION ABOVE 10K IN THE CuTi INTERMETALLIC COMPOUND UNDER ELECTRON IRRADIATION.

J. Koike; D. E. Luzzi; M. Meshii; P. R. Okamoto

TEMPERATURE DEPENDENCE OF AMORPHIZATION ABOVE 10K IN THE CuTi INTERMETALLIC COMPOUND UNDER ELECTRON IRRADIATION.

J. Koike, D. E. Luzzi, M. Meshii, P. R. Okamoto

研究成果: Conference contribution

抄録

The critical dose required to amorphize the crystalline compound CuTi during irradiation with 1 MeV electrons has been investigated from 10 to 288 K. The results show that above a critical temperature (Tc) of about 185 K, CuTi remains crystalline and only defect clusters are formed. Below Tc, amorphization occurs with no observable cluster formation. The critical dose for amorphization was found to be temperature dependent below Tc: as the irradiation temperature increases, a higher dose is required to induce amorphization. This observation supports the concept that Tc corresponds to the vacancy migration temperature. Below Tc, interstitial migration may contribute to the observed reduction in the amorphization rate with increasing temperature.

本文言語	English
ホスト出版物のタイトル	Materials Research Society Symposia Proceedings
編集者	Michael O. Thompson, S.Thomas Picraux, James S. Williams
出版社	Materials Research Soc
ページ	425-430
ページ数	6
ISBN（印刷版）	0931837405
出版ステータス	Published - 1987 12月 1
外部発表	はい
イベント	Beam-Solid Interact and Transient Processes - Boston, MA, USA 継続期間: 1986 12月 1 → 1986 12月 4

出版物シリーズ

名前	Materials Research Society Symposia Proceedings
巻	74
ISSN（印刷版）	0272-9172

Other

Other	Beam-Solid Interact and Transient Processes
City	Boston, MA, USA
Period	86/12/1 → 86/12/4

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学
材料力学
機械工学

他のファイルとリンク

引用スタイル

Koike, J., Luzzi, D. E., Meshii, M., & Okamoto, P. R. (1987). TEMPERATURE DEPENDENCE OF AMORPHIZATION ABOVE 10K IN THE CuTi INTERMETALLIC COMPOUND UNDER ELECTRON IRRADIATION. In M. O. Thompson, S. T. Picraux, & J. S. Williams (Eds.), Materials Research Society Symposia Proceedings (pp. 425-430). (Materials Research Society Symposia Proceedings; Vol. 74). Materials Research Soc.

TEMPERATURE DEPENDENCE OF AMORPHIZATION ABOVE 10K IN THE CuTi INTERMETALLIC COMPOUND UNDER ELECTRON IRRADIATION. / Koike, J.; Luzzi, D. E.; Meshii, M. その他.

Materials Research Society Symposia Proceedings. ed. / Michael O. Thompson; S.Thomas Picraux; James S. Williams. Materials Research Soc, 1987. p. 425-430 (Materials Research Society Symposia Proceedings; Vol. 74).

研究成果: Conference contribution

Koike, J, Luzzi, DE, Meshii, M & Okamoto, PR 1987, TEMPERATURE DEPENDENCE OF AMORPHIZATION ABOVE 10K IN THE CuTi INTERMETALLIC COMPOUND UNDER ELECTRON IRRADIATION. in MO Thompson, ST Picraux & JS Williams (eds), Materials Research Society Symposia Proceedings. Materials Research Society Symposia Proceedings, vol. 74, Materials Research Soc, pp. 425-430, Beam-Solid Interact and Transient Processes, Boston, MA, USA, 86/12/1.

Koike, J. ; Luzzi, D. E. ; Meshii, M. その他. / TEMPERATURE DEPENDENCE OF AMORPHIZATION ABOVE 10K IN THE CuTi INTERMETALLIC COMPOUND UNDER ELECTRON IRRADIATION. Materials Research Society Symposia Proceedings. editor / Michael O. Thompson ; S.Thomas Picraux ; James S. Williams. Materials Research Soc, 1987. pp. 425-430 (Materials Research Society Symposia Proceedings).

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abstract = "The critical dose required to amorphize the crystalline compound CuTi during irradiation with 1 MeV electrons has been investigated from 10 to 288 K. The results show that above a critical temperature (Tc) of about 185 K, CuTi remains crystalline and only defect clusters are formed. Below Tc, amorphization occurs with no observable cluster formation. The critical dose for amorphization was found to be temperature dependent below Tc: as the irradiation temperature increases, a higher dose is required to induce amorphization. This observation supports the concept that Tc corresponds to the vacancy migration temperature. Below Tc, interstitial migration may contribute to the observed reduction in the amorphization rate with increasing temperature.",

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AB - The critical dose required to amorphize the crystalline compound CuTi during irradiation with 1 MeV electrons has been investigated from 10 to 288 K. The results show that above a critical temperature (Tc) of about 185 K, CuTi remains crystalline and only defect clusters are formed. Below Tc, amorphization occurs with no observable cluster formation. The critical dose for amorphization was found to be temperature dependent below Tc: as the irradiation temperature increases, a higher dose is required to induce amorphization. This observation supports the concept that Tc corresponds to the vacancy migration temperature. Below Tc, interstitial migration may contribute to the observed reduction in the amorphization rate with increasing temperature.

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TEMPERATURE DEPENDENCE OF AMORPHIZATION ABOVE 10K IN THE CuTi INTERMETALLIC COMPOUND UNDER ELECTRON IRRADIATION.

抄録

出版物シリーズ

Other

ASJC Scopus subject areas

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