Te concentration dependent photoemission and inverse-photoemission study of FeSe1-xTex

Takayoshi Yokoya, Rikiya Yoshida, Yuki Utsumi, Koji Tsubota, Hiroyuki Okazaki, Takanori Wakita, Yoshikazu Mizuguchi, Yoshihiko Takano, Takayuki Muro, Yukako Kato, Hiroshi Kumigashira, Masaharu Oshima, Hisatomo Harima, Yoshihiro Aiura, Hitoshi Sato, Akihiro Ino, Hirofumi Namatame, Masaki Taniguchi, Masaaki Hirai, Yuji Muraoka

    研究成果: Article査読

    7 被引用数 (Scopus)

    抄録

    We have characterized the electronic structure of FeSe1-xTe x for various x values using soft x-ray photoemission spectroscopy (SXPES), high-resolution photoemission spectroscopy (HRPES) and inverse photoemission spectroscopy (IPES). The SXPES valence band spectral shape shows that the 2 eV feature in FeSe, which was ascribed to the lower Hubbard band in previous theoretical studies, becomes less prominent with increasing x. HRPES exhibits systematic x dependence of the structure near the Fermi level (E F): its splitting near EF and filling of the pseudogap in FeSe. IPES shows two features, near EF and approximately 6 eV above EF; the former may be related to the Fe 3d states hybridized with chalcogenide p states, while the latter may consist of plane-wave-like and Se d components. In the incident electron energy dependence of IPES, the density of states near EF for FeSe and FeTe has the Fano lineshape characteristic of resonant behavior. These compounds exhibit different resonance profiles, which may reflect the differences in their electronic structures. By combining the PES and IPES data the on-site Coulomb energy was estimated at 3.5 eV for FeSe.

    本文言語English
    論文番号054403
    ジャーナルScience and Technology of Advanced Materials
    13
    5
    DOI
    出版ステータスPublished - 2012 10

    ASJC Scopus subject areas

    • Materials Science(all)

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