TDS and RBS studies of Ar implanted to Si

R. Hanada, S. Saito, Shinji Nagata, S. Yamaguchi, T. Shinozuka, M. Fujioka

研究成果: Conference article査読

10 被引用数 (Scopus)

抄録

Thermodeposition (TDS) and Rutherford backscattering (RBS) spectrometries were performed for Ar implanted to Si. TDS was measured with varying the implantation dose (1×10 13 -10 17 /cm 2 ) and the implantation energies (20-60keV). TDS measurements showed that Ar ions are released from specimens in two steps between 800 and 1100K revealing that the implanted Ar ions are in two different states in Si. Temperatures of these steps were measured as functions of the implantation dose and the energy to conclude that a solute Ar ion is released between 800-100K depending on the implantation energy and that in an agglomerate form at 1100K. The magnitude of the activation energy for the diffusion for Ar in Si was determined as 1.47eV±0.06eV from the results.

本文言語English
ページ(範囲)1375-1380
ページ数6
ジャーナルMaterials Science Forum
196-201
pt 3
出版ステータスPublished - 1995 12 1
イベントProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
継続期間: 1995 7 231995 7 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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