Tbit/inch 2 data storage using scanning nonlinear dielectric microscopy

Yasuo Cho, Kenjiro Fujimoto, Yoshiomi Hiranaga, Yasuo Wagatsuma, Atsushi Onoe, Kazuya Terabe, Kenji Kitamura

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Nano-sized inverted domain dots in ferroelectric materials is a technology with potential applications in ultrahigh-density rewritable data storage systems. Up to now, we have studied domain inversion characteristics of stoichiometric and congruent LiTaO 3 single crystals in nanoscopic area using scanning nonlinear dielectric microscopy (SNDM), which is the technique for observing ferroelectric polarization distribution with sub-nanometer resolution. In this study, we have revealed nano-sized inverted domain remained stably for a long time, and successfully formed inverted domain dots at a data density of 1.50 Tbit/inch 2 , representing the highest memory density for rewritable electric data storage reported to date.

本文言語English
ページ(範囲)51-58
ページ数8
ジャーナルFerroelectrics
292
DOI
出版ステータスPublished - 2003 6 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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