TY - JOUR
T1 - Ta2O5-based redox memory formed by neutral beam oxidation
AU - Ohno, Takeo
AU - Samukawa, Seiji
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/6
Y1 - 2016/6
N2 - A room temperature neutral beam oxidation process using a tantalum (Ta) metal film was used to obtain a high quality Ta oxide (Ta2O5) film. After irradiation of a Ta metal film with a neutral oxygen beam, a nanometer-thick Ta2O5 film with a film density of 7.5 g/cm3 was obtained. We also confirmed that the fabricated Cu/Ta2O5/Pt redox memory structure shows a bipolar resistive switching characteristic. This result demonstrates the great potential of neutral beam metal oxidation for the development of redox-based memory devices.
AB - A room temperature neutral beam oxidation process using a tantalum (Ta) metal film was used to obtain a high quality Ta oxide (Ta2O5) film. After irradiation of a Ta metal film with a neutral oxygen beam, a nanometer-thick Ta2O5 film with a film density of 7.5 g/cm3 was obtained. We also confirmed that the fabricated Cu/Ta2O5/Pt redox memory structure shows a bipolar resistive switching characteristic. This result demonstrates the great potential of neutral beam metal oxidation for the development of redox-based memory devices.
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U2 - 10.7567/JJAP.55.06GJ01
DO - 10.7567/JJAP.55.06GJ01
M3 - Article
AN - SCOPUS:84974529332
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
M1 - 06GJ01
ER -