Ta2O5-based redox memory formed by neutral beam oxidation

Takeo Ohno; Seiji Samukawa

doi:10.7567/JJAP.55.06GJ01

Ta₂O₅-based redox memory formed by neutral beam oxidation

Takeo Ohno, Seiji Samukawa

研究成果: Article

1 引用（Scopus）

抜粋

A room temperature neutral beam oxidation process using a tantalum (Ta) metal film was used to obtain a high quality Ta oxide (Ta₂O₅) film. After irradiation of a Ta metal film with a neutral oxygen beam, a nanometer-thick Ta₂O₅ film with a film density of 7.5 g/cm3 was obtained. We also confirmed that the fabricated Cu/Ta₂O₅/Pt redox memory structure shows a bipolar resistive switching characteristic. This result demonstrates the great potential of neutral beam metal oxidation for the development of redox-based memory devices.

元の言語	English
記事番号	06GJ01
ジャーナル	Japanese journal of applied physics
巻	55
発行部数	6
DOI	https://doi.org/10.7567/JJAP.55.06GJ01
出版物ステータス	Published - 2016 6

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

文献にアクセス

10.7567/JJAP.55.06GJ01

フィンガープリント Ta<sub>2</sub>O<sub>5</sub>-based redox memory formed by neutral beam oxidation' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

これを引用

Ohno, T., & Samukawa, S. (2016). Ta₂O₅-based redox memory formed by neutral beam oxidation. Japanese journal of applied physics, 55(6), [06GJ01]. https://doi.org/10.7567/JJAP.55.06GJ01

@article{fcf1b8724ce94333928efcdf1b33f26e,

title = "Ta2O5-based redox memory formed by neutral beam oxidation",

abstract = "A room temperature neutral beam oxidation process using a tantalum (Ta) metal film was used to obtain a high quality Ta oxide (Ta2O5) film. After irradiation of a Ta metal film with a neutral oxygen beam, a nanometer-thick Ta2O5 film with a film density of 7.5 g/cm3 was obtained. We also confirmed that the fabricated Cu/Ta2O5/Pt redox memory structure shows a bipolar resistive switching characteristic. This result demonstrates the great potential of neutral beam metal oxidation for the development of redox-based memory devices.",

author = "Takeo Ohno and Seiji Samukawa",

year = "2016",

month = jun,

doi = "10.7567/JJAP.55.06GJ01",

language = "English",

volume = "55",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6",

}

TY - JOUR

T1 - Ta2O5-based redox memory formed by neutral beam oxidation

AU - Ohno, Takeo

AU - Samukawa, Seiji

PY - 2016/6

Y1 - 2016/6

N2 - A room temperature neutral beam oxidation process using a tantalum (Ta) metal film was used to obtain a high quality Ta oxide (Ta2O5) film. After irradiation of a Ta metal film with a neutral oxygen beam, a nanometer-thick Ta2O5 film with a film density of 7.5 g/cm3 was obtained. We also confirmed that the fabricated Cu/Ta2O5/Pt redox memory structure shows a bipolar resistive switching characteristic. This result demonstrates the great potential of neutral beam metal oxidation for the development of redox-based memory devices.

AB - A room temperature neutral beam oxidation process using a tantalum (Ta) metal film was used to obtain a high quality Ta oxide (Ta2O5) film. After irradiation of a Ta metal film with a neutral oxygen beam, a nanometer-thick Ta2O5 film with a film density of 7.5 g/cm3 was obtained. We also confirmed that the fabricated Cu/Ta2O5/Pt redox memory structure shows a bipolar resistive switching characteristic. This result demonstrates the great potential of neutral beam metal oxidation for the development of redox-based memory devices.

UR - http://www.scopus.com/inward/record.url?scp=84974529332&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84974529332&partnerID=8YFLogxK

U2 - 10.7567/JJAP.55.06GJ01

DO - 10.7567/JJAP.55.06GJ01

M3 - Article

AN - SCOPUS:84974529332

VL - 55

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6

M1 - 06GJ01

ER -