Tantalum nitride metal gate FD-SOI CMOS FETs using low resistivity self-grown bcc-tantalum layer

Hiroyuki Shimada, Ichiro Ohshima, Takeo Ushiki, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: Article査読

25 被引用数 (Scopus)

抄録

A Tantalum Nitride (TaNx) metal gate complementary metal oxide semiconductor (CMOS) technology using low-resistivity (∼ 15 μΩcm), bcc(body-centered-cubic)-phase tantalum metal layer has been developed, featuring low-temperature processing below 550°C except for gate oxide formation. It was found for the first time that TaNx works not only as a buffer layer which prevents tantalum metal film and gate oxide film from reaction with each other, but also as a seed layer which helps self-growth of bcc-phase tantalum films by hetero-epitaxy. Furthermore, we have demonstrated that the work function of TaNx gate is close to midgap of silicon, hence similar to Titanium Nitride (TiNx) gate. We have also demonstrated that MOS capacitors on bulk and fully-depleted silicon-on-insulator(FDSOI) CMOS with TaNx/bcc-Ta/TaNx stacked metal gate structure have excellent electrical characteristics and that the ring-oscillator fabricated using the stacked metal gate CMOS can be operated successfully with 3.8 nm-thickness gate oxide.

本文言語English
ページ(範囲)1619-1626
ページ数8
ジャーナルIEEE Transactions on Electron Devices
48
8
DOI
出版ステータスPublished - 2001 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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