Synthesis of Eu-doped GaN by the Na flux method and characterization

研究成果: Article査読


Eu-doped GaN crystals were synthesized at 600-750°C and N2 pressure of 5 MPa from 1 mol% Eu-added Na-Ga melts. The yield and morphology of crystals varied with temperature and Na mole fraction, rNa=Na/(Na+Ga) in the melts. Colorless transparent columnar crystals of Eu-doped GaN were obtained as crusts formed on the Na-Ga melt surface at rNa=0.67 and 650 or 700 °C. Under an ultraviolet light, the crusts glowed red. A strong emission peak concerned with the intra-4f transition of Eu3+from 5D0 to 7F2 was observed at 621 nm in the photoluminescence (PL) spectrum. The maximum PL intensity was observed in the sample prepared at rNa=0.67 and 650 °C.

ジャーナルFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
出版ステータスPublished - 2007 2

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry

フィンガープリント 「Synthesis of Eu-doped GaN by the Na flux method and characterization」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。