Synchrotron radiation nano-spectroscopy of dielectrics for LSI and ReRAM

Masaharu Oshima, Satoshi Toyoda, Koji Horiba, Ryutaro Yasuhara, Hiroshi Kumigashira

研究成果: Conference contribution

抜粋

Metal/high-k gate dielectrics stack structures for LSIs and metal/transition-metal-oxides (TMO)/metal structures for resistance random access memory (ReRAM) have been analyzed using synchrotron radiation nano-spectroscopy from the viewpoint of interfacial chemical and electronic states. We have developed a scanning photoelectron microscope (SPEM) with an angle-resolved electron analyzer and succeeded in obtaining chemical-state- resolved images and pin-point in-depth profiles of LSI gate patterns with 70 nm lateral resolution. For ReRAM, chemical-state-resolved images of Cu for a planar-type Pt/CuO/Pt resistance switching (RS) device revealed conductive filaments in TMO using photoelectron emission microscope (PEEM). Furthermore, in and out diffusion phenomena of oxygen corresponding to bias polarity for RS were observed for Pt/TaO x/Pt switching devices. Interfacial redox reactions which are common to all ReRAM devices are also observed for Al/TMO interfaces.

元の言語English
ホスト出版物のタイトルPhysics and Technology of High-k Materials 9
ページ453-460
ページ数8
エディション3
DOI
出版物ステータスPublished - 2011 12 1
外部発表Yes
イベント9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States
継続期間: 2011 10 102011 10 12

出版物シリーズ

名前ECS Transactions
番号3
41
ISSN(印刷物)1938-5862
ISSN(電子版)1938-6737

Other

Other9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
United States
Boston, MA
期間11/10/1011/10/12

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Oshima, M., Toyoda, S., Horiba, K., Yasuhara, R., & Kumigashira, H. (2011). Synchrotron radiation nano-spectroscopy of dielectrics for LSI and ReRAM. : Physics and Technology of High-k Materials 9 (3 版, pp. 453-460). (ECS Transactions; 巻数 41, 番号 3). https://doi.org/10.1149/1.3633061