Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions

M. Fukuda, M. Yamanouchi, F. Matsukura, H. Ohno

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Switching of tunnel magnetoresistance in magnetic tunnel junctions (MTJs) has been achieved by magnetic domain wall motion in one of the electrodes. The fabricated devices have two (Ga,Mn)As-based MTJs with a common bottom (Ga,Mn)As electrode, in which the domain wall motion takes place both by magnetic field and by current. This configuration allows not only the observation of switching but also time-resolved detection of the position of the domain wall by the tunnel magnetoresistance.

本文言語English
論文番号052503
ジャーナルApplied Physics Letters
91
5
DOI
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル