Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell

Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Chun Chieh Lin, Tseung Yuen Tseng

研究成果: Article査読

15 被引用数 (Scopus)

抄録

The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.

本文言語English
論文番号327
ジャーナルNanoscale Research Letters
13
DOI
出版ステータスPublished - 2018

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

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