Terahertz (THz) waves are a promising candidate for detection, imaging, and advanced communications with ultrafast transmission speed. To develop THz technologies, miniaturized devices for controlling THz waves are essential. In this study, a high-performance vanadium dioxide (VO2)-based switchable band-pass metamaterial integrated with a silicon substrate for THz waves is designed and fabricated. In the “on” state, it offers a passband with a 70% depth and a 0.34 THz bandwidth at 0.56 THz frequency. Additionally, it can be switched thermally to a mirror for 0.1–2.0 THz waves in the “off” state by the phase transition effect of the VO2 film. Moreover, the relationship between the line width and spectra of the device is investigated by simulation. The wheel-shaped gold structure with round corners provides the filter with tractability during fabrication. Furthermore, the silicon substrate allows the metamaterial to be readily miniaturized and integrated into micro-electromechanical systems (MEMS) technology. This filter is expected to be favorable in frequency-selective THz applications.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics