Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC

Q. K. Xue, Q. Z. Xue, S. Kuwano, K. Nakayama, T. Sakurai, I. S.T. Tsong, X. G. Qiu, Y. Segawa

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We report on the surface reconstructions on the basal planes of wurtzite GaN. Depending on the surface polarity, two distinct classes of reconstructions form. The Ga-polar surface displays the Ga fluid-1 ×1, 10 × 10, 5,√3 × 2√13, 5 × 5, 4 × 4, and 2 × 2, and the (0 0 0 1) N-polar surface the 6 × 8, 6 × 6, √7 × √7 and 2 × 3 with decreasing surface Ga coverage. We will show that their structure is consistent with a simple Ga-adatom-based scheme. Crystalline structure and optical properties of the GaN epilayers are examined by high resolution X-ray diffraction and photoluminescence, and the results reveal a strong relation between the threading-dislocation density and the intensities of both near-band transition at 3.427eV and yellow luminescence at 2.16eV.

本文言語English
ページ(範囲)41-47
ページ数7
ジャーナルJournal of Crystal Growth
229
1
DOI
出版ステータスPublished - 2001 7 2
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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