Surface structure of 3C-SiC(111) fabricated by C60 precursor: A scanning tunneling microscopy and high-resolution electron energy loss spectroscopy study

C. W. Hu, A. Kasuya, Shozo Suto, A. Wawro, Y. Nishina

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The surface composition and structure of the 3C-SiC(111) surface prepared by thermal reaction of C60 molecules with the Si(111) substrate are investigated with scanning tunneling microscopy and high-resolution electron energy loss spectroscopy. Three distinct surface reconstructions are observed by STM on the SiC(111) surfaces as the reaction temperature varied from 800 to 1200°C. The (2×2) and (2×3) reconstructions observed under low reaction temperature (<900 °C) are considered to be a C cluster-covered surface. The (3×3) structure yielded at the elevated temperature (1100 °C) is believed to be the Si-terminated 3C-SiC(111) surface. A transient (4×3) structure shows up at around 1000 °C during the annealing processing. The surface composition and reconstruction are further confirmed through the optical Fuchs-Kliewer surface phonon measured in situ by high-resolution energy loss spectroscopy. The diffusivity of Si atoms through SiC film at various temperatures is suggested as the main reason for the formation of different surface reconstructions.

本文言語English
ページ(範囲)938-942
ページ数5
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
14
2
出版ステータスPublished - 1996 3 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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