Surface photovoltage spectroscopy characterization of InGaPN alloys grown on GaP substrates

H. P. Hsu; P. Y. Wu; Y. S. Huang; S. Sanorpim; K. K. Tiong; R. Katayama; K. Onabe

doi:10.1088/0953-8984/19/9/096009

Surface photovoltage spectroscopy characterization of InGaPN alloys grown on GaP substrates

H. P. Hsu, P. Y. Wu, Y. S. Huang, S. Sanorpim, K. K. Tiong, R. Katayama, K. Onabe

金属材料研究所・材料設計研究部

研究成果: Article › 査読

5 被引用数 (Scopus)

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In_0.176Ga_0.824P_1-yN_y (y ≤ 1.5%-8.7%) alloys grown on GaP(001) substrates via metalorganic vapour phase epitaxy were characterized by surface photovoltage spectroscopy (SPS) in the temperature range between 125 and 400K. The band gap energies are determined and their temperature dependences are analysed by Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of the band gap energies are evaluated and discussed. The surface photovoltage spectra also revealed that a transition from indirect to direct band gap is taking place for the N-incorporated samples and the quadratic correction for the band gap bowing is only applicable for low nitrogen containing samples.

本文言語	English
論文番号	096009
ジャーナル	Journal of Physics Condensed Matter
巻	19
号	9
DOI	https://doi.org/10.1088/0953-8984/19/9/096009
出版ステータス	Published - 2007 3月 7

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学

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10.1088/0953-8984/19/9/096009

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title = "Surface photovoltage spectroscopy characterization of InGaPN alloys grown on GaP substrates",

abstract = "In0.176Ga0.824P1-yNy (y ≤ 1.5%-8.7%) alloys grown on GaP(001) substrates via metalorganic vapour phase epitaxy were characterized by surface photovoltage spectroscopy (SPS) in the temperature range between 125 and 400K. The band gap energies are determined and their temperature dependences are analysed by Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of the band gap energies are evaluated and discussed. The surface photovoltage spectra also revealed that a transition from indirect to direct band gap is taking place for the N-incorporated samples and the quadratic correction for the band gap bowing is only applicable for low nitrogen containing samples.",

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T1 - Surface photovoltage spectroscopy characterization of InGaPN alloys grown on GaP substrates

AU - Hsu, H. P.

AU - Wu, P. Y.

AU - Huang, Y. S.

AU - Sanorpim, S.

AU - Tiong, K. K.

AU - Katayama, R.

AU - Onabe, K.

PY - 2007/3/7

Y1 - 2007/3/7

N2 - In0.176Ga0.824P1-yNy (y ≤ 1.5%-8.7%) alloys grown on GaP(001) substrates via metalorganic vapour phase epitaxy were characterized by surface photovoltage spectroscopy (SPS) in the temperature range between 125 and 400K. The band gap energies are determined and their temperature dependences are analysed by Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of the band gap energies are evaluated and discussed. The surface photovoltage spectra also revealed that a transition from indirect to direct band gap is taking place for the N-incorporated samples and the quadratic correction for the band gap bowing is only applicable for low nitrogen containing samples.

AB - In0.176Ga0.824P1-yNy (y ≤ 1.5%-8.7%) alloys grown on GaP(001) substrates via metalorganic vapour phase epitaxy were characterized by surface photovoltage spectroscopy (SPS) in the temperature range between 125 and 400K. The band gap energies are determined and their temperature dependences are analysed by Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of the band gap energies are evaluated and discussed. The surface photovoltage spectra also revealed that a transition from indirect to direct band gap is taking place for the N-incorporated samples and the quadratic correction for the band gap bowing is only applicable for low nitrogen containing samples.

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Surface photovoltage spectroscopy characterization of InGaPN alloys grown on GaP substrates

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