Surface passivation of GaAs using ArF excimer laser in a H2S gas ambient

N. Yoshida, S. Chichibu, T. Akane, M. Totsuka, H. Uji, S. Matsumoto, H. Higuchi

研究成果: Article査読

10 被引用数 (Scopus)

抄録

A dry surface passivation of GaAs using the combination of H2S gas with an ArF excimer laser was examined. Native oxides at the surface were etched away by laser irradiation in vacuum. By subsequent laser irradiation in a H2S gas ambient, the surface was covered with sulfur atoms. The dry passivation technique in this study is comparable to the wet passivation process using (NH4)2Sx treatment in terms of the sulfur coverage ratio.

本文言語English
ページ(範囲)3035-3037
ページ数3
ジャーナルApplied Physics Letters
63
22
DOI
出版ステータスPublished - 1993
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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