Chlorine-induced modification of Si(100)-(2×1) was demonstrated under conditions where Cl was recycled rather than desorbed on SiCl2. A dimer with 2SiCl, 2Cl atoms, converted to Si + SiCl2, allowing the bare Si atom to escape. The SiCl2 unit decayed through Cl diffusion at temperature below the desorption threshold allowing the second Si atom to escape. The result was terrace region with structures, a dimer vacancy and Cl. Access to this low energy pathway was controlled by Cl concentration and temperature.
|ジャーナル||Physical review letters|
|出版ステータス||Published - 2002 3月 25|
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