Surface modification of silicon carbide powder with silica coating by rotary chemical vapor deposition

Zhenhua He, Hirokazu Katsui, Rong Tu, Takashi Goto

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

The surface of silicon carbide (SiC) powder was modified by coating with amorphous silica (SiO2) using (C2H5O 4)Si (tetraethyl orthosilicate: TEOS) as a precursor by rotary chemical vapor deposition (RCVD). With increasing deposition time from 0.9 to 14.4 ks, the mass content of SiO2 coating increased from 1 to 35 mass%. The SiO2 mass content had a linear relationship with deposition time from 2.7 to 7.2 ks. The effects of O2 gas flow, deposition temperature (Tdep), total pressure (Ptot) and precursor vaporization temperature (Tvap) on the SiO2 yield by RCVD were investigated. At O2 gas flow of 4.2 × 10-7 m3 s-1, Tdep of 948 K, P tot of 400 Pa and deposition time of 7.2 ks, the maximum SiO 2 yield of 1.82 × 10-7 kg/s with SiC powder of 4.5 × 10-3 kg by RCVD was obtained.

本文言語English
ホスト出版物のタイトルAdvanced Ceramics and Novel Processing
出版社Trans Tech Publications Ltd
ページ232-236
ページ数5
ISBN(印刷版)9783038351306
DOI
出版ステータスPublished - 2014
イベント5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013 - Wuhan, China
継続期間: 2013 12 92013 12 12

出版物シリーズ

名前Key Engineering Materials
616
ISSN(印刷版)1013-9826
ISSN(電子版)1662-9795

Other

Other5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013
国/地域China
CityWuhan
Period13/12/913/12/12

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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