Surface modification of cubic GaN buffer layer grown by metalorganic vapor phase epitaxy

Akira Nagayama, Ryuji Katayama, Jun Wu, Kentaro Onabe, Hidetaka Sawada, Eliko Takuma, Hideki Ichinose, Yasuhiro Shiraki

研究成果: Conference article査読

抄録

Anisotropic X-Ray diffraction (XRD) and transport properties of cubic GaN grown on GaAs substrates correspond to the features of low-temperature grown GaN (LT-GaN) buffer layer. When the LT-GaN layer is grown on the surface tilted from (001) to [1-10] with annealing in arsenic ambient, the macroscopic step edges along [1-10] direction are modified by either the ambient of thermal annealing, or substrate misorientation. A parallel conduction in GaN, GaAs, and GaN/GaAs hetero-interface was observed by photoconductivity measurements. Transmission electron microscope (TEM) observation shows that self-annihilations for (-111) B stacking faults are preferentially occurred near GaAs interface when GaN film grown on the surface tilted from (001) toward [1-10] (As step edge) is annealed in arsenic ambient. TEM observation also shows that stacking faults and dislocations are preferentially generated near GaN/GaAs interface. It is suggested that anisotropic transport properties correspond to the well-like potential generated by band bending at GaN/GaAs interface. The nearly isotropic mobility of 3,000 cm2/Vsec at 77K is obtained by improving interface property.

本文言語English
ページ(範囲)G3.20.1-G3.20.6
ジャーナルMaterials Research Society Symposium - Proceedings
639
出版ステータスPublished - 2001
イベントGaN and Related Alloys 2000 - Boston, MA, United States
継続期間: 2000 11 272000 12 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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