Surface metal cleaning of GaN surface based on redox potential of cleaning solution

K. Nagao, K. Nakamura, A. Teramoto, Y. Shirai, F. Imaizumi, T. Suwa, S. Sugawa, T. Ohmi

研究成果: Conference contribution

抄録

The efficacy of wet cleaning on GaN surface to remove the metal contamination, such as Fe, Ni, Cu, and Zn, has been investigated using total-reflection X-ray fluorescence analyzer (TXRF). Metal contamination on GaN surface can be reduced by the solutions with low pH and high redox potential. The start redox potential of the metal oxidation on GaN surface is larger than that of metal itself. Because metal can receive electrons from GaN surface, and then metal cannot be oxidized to ionization by solutions. The metal contamination on GaN can be reduced by the solutions with the pH less than 4.2 and the redox potential larger than 0.8 V are required. In addition, the cleaning solution required the etching ability of β- Ga2O3, because some kind of metals include in the native oxide of GaN, which is like β-Ga2O3. This method is very useful for metal cleaning and very effective for reducing chemical consumption. analysis.

本文言語English
ホスト出版物のタイトルState-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015
編集者Y. L. Wang, V. Chakrapani, T. J. Anderson, J. M. Zavada, D. C. R. Abernathy, J. K. Hite
出版社Electrochemical Society Inc.
ページ11-21
ページ数11
7
ISBN(電子版)9781607685975
DOI
出版ステータスPublished - 2015
イベントSymposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting - Chicago, United States
継続期間: 2015 5 242015 5 28

出版物シリーズ

名前ECS Transactions
番号7
66
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Other

OtherSymposium on State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015 - 227th ECS Meeting
国/地域United States
CityChicago
Period15/5/2415/5/28

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「Surface metal cleaning of GaN surface based on redox potential of cleaning solution」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル