Surface mapping of carrier density in a GaN wafer using a frequency-agile THz source

Seigo Ohno, Akihide Hamano, Katsuhiko Miyamoto, Chisato Suzuki, Hiromasa Ito

研究成果: Article査読

28 被引用数 (Scopus)

抄録

We developed a method for mapping the carrier density on a semiconductor substrate surface based on terahertz (THz)-reflective measurement. Reflectivity in the THz-frequency region away from the optical phonon frequency is sensitive to the carrier density in semiconductors. However, reflectivity in the optical phonon frequency regions is around 1.0, independent of the carrier density. We developed a THz-reflective spectral imaging system using a frequency-agile, ultra-widely tunable THz source (1-40 THz). Different reflective images were obtained from GaN samples of carrier density 2.5 × 1016 cm-3, 1.0 × 1018 cm-3 and 1.5 × 1018 cm-3 using 22.7 and 26.5 THz. The image contrast reflected the GaN crystals' carrier density.

本文言語English
論文番号9012
ジャーナルJournal of the European Optical Society
4
DOI
出版ステータスPublished - 2009
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学

フィンガープリント

「Surface mapping of carrier density in a GaN wafer using a frequency-agile THz source」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル