Surface hydrogen desorption as a rate-limiting process in silane gas-source molecular beam epitaxy

Fumihiko Hirose, Maki Suemitsu, Nobuo Miyamoto

研究成果: Article査読

35 被引用数 (Scopus)

抄録

Surface chemical processes of the silane gas-source molecular beam epitaxy were investigated for Si(100) and Si(111) surfaces by comparing the growth rate with the surface hydrogen coverage during epitaxy. The surface hydrogen coverage was obtained through a thermal desorption measurement just after a quenching of the epitaxy. It was found that the hydrogen desorption process is the major rate-limiting process both on Si(100) and Si(111) surfaces below 600°C.

本文言語English
ページ(範囲)L1881-L1883
ジャーナルJapanese journal of applied physics
29
10
DOI
出版ステータスPublished - 1990 10

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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