Surface electronic structure of single-domain Si( 001) 2 × 2-Al: an angle-resolved photoelectron spectroscopy study using synchrotron radiation

H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, A. Kakizaki, S. Kono

研究成果: Letter査読

19 被引用数 (Scopus)

抄録

The electronic structure of a single-domain Si(001)2 × 2-Al surface has been studied by angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation. Through detailed ARPES measurements along various symmetry axes of the surface Brillouin zone, the existence and dispersions of five surface states are identified, one at binding energies a little less than 1 eV and the others between 1 and 2 eV. The origin of the surface states are discussed in terms of the Al-dimer structures on Si(001).

本文言語English
ページ(範囲)L177-L182
ジャーナルSurface Science
321
3
DOI
出版ステータスPublished - 1994 12月 20

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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