The current drivability of p-MOSFET on Si(110) surface is 2-3 times larger than that on Si(100) surface. The electrical properties of those devices are influenced by micro-roughness of silicon surface. We focused on the wet cleaning process and studied the influence of ultra pure water and the methods of cleaning process. Atomic force microscopy (AFM) was used for the evaluation of micro-roughness. The amount of dissolved silicon atoms into ultra pure water is estimated by inductively coupled plasma-atomic emission spectrometry (ICP-AES). Micro-roughness of silicon surface can be improved by control of ambient gas and dissolved gas of ultra pure water rinse. Hydrogen termination on silicon surface was also studied.
|出版ステータス||Published - 2004 12 1|
|イベント||Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States|
継続期間: 2004 10 3 → 2004 10 8
|Other||Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium|
|Period||04/10/3 → 04/10/8|
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