Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

T. Matsukawa, Y. X. Liu, W. Mizubayashi, J. Tsukada, H. Yamauchi, K. Endo, Y. Ishikawa, S. Ouchi, H. Ota, S. Migita, Y. Morita, M. Masahara

研究成果: Article査読

12 被引用数 (Scopus)

抄録

An amorphous TaSiN metal gate (MG) is introduced into double-gate fin field-effect transistors (FinFETs) to suppress work function variation (WFV) of the MG, which is a dominant source of threshold voltage (Vt) variability for MG FinFETs. Comparing with a poly-crystalline TiN gate, the TaSiN gate reduces Vt variation dramatically and thus records the smallest AVt value of 1.34 mV μm reported so far for the MG-FinFETs. By decomposing the variation source due to interface trap density, the WFV suppression using the amorphous MG is confirmed to be effective to achieve the well-suppressed variability of the MG-FinFETs.

本文言語English
論文番号162104
ジャーナルApplied Physics Letters
102
16
DOI
出版ステータスPublished - 2013 4 22
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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