Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate

N. Usami, Y. Nose, K. Fujiwara, K. Nakajima

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We attempted to utilize homemade SiGe bulk crystal as a substrate for epitaxy of strain-controlled heterostructures. X-ray reciprocal space mapping clarified that the growth of a Si thin film on a SiGe bulk substrate leads to reduction in the orientation fluctuation compared with that on a SiGe virtual substrate. Furthermore, analysis of Raman spectra revealed a dramatic decrease of the strain fluctuation in the strained Si film on the SiGe bulk substrate. These results suggest that the SiGe bulk crystal can be utilized as a substrate for various strain-controlled heterostructures for fundamental studies as well as improvement of device performance.

本文言語English
論文番号221912
ジャーナルApplied Physics Letters
88
22
DOI
出版ステータスPublished - 2006 5 29

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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