Suppression of atomic exchange between Ge and Si during germane adsorption on Si(001) using atomically flat surface

Yuzuru Narita, Takeshi Murata, Maki Suemitsu

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Impact of surface roughness on the atomic exchange between Si and Ge upon room-temperature adsorption of germane (GeH4) at Si(001)-2 × 1 surface has been investigated by using temperature-programmed desorption (TPD) and multiple-internal-reflection Fourier-transform infrared spectroscopy (MIR-FTIR). Two different pretreatments of Si surfaces have been tested. On the normal surface, prepared simply by a 1200 °C flash anneal, considerable atomic exchange between Si and Ge was observed. On the epi-surface, prepared by a flash anneal followed by a Si-homoepitaxy, the atomic exchange was greatly suppressed. We relate this suppression with a possible reduction of the dimer vacancies that have been generated on the surface during the flash anneal. Suppression of surface roughness in atomic order is key to suppression of atomic exchange between Si and Ge during Ge/Si interface formation.

本文言語English
ページ(範囲)166-168
ページ数3
ジャーナルThin Solid Films
508
1-2
DOI
出版ステータスPublished - 2006 6月 5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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