Suppression of 1/f noise in accumulation mode FD-SOI MOSFETs on Si(lOO) and (110) surfaces

W. Cheng, C. Tye, P. Gaubert, A. Teramoto, S. Sugawa, T. Ohmi

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

In this paper, a new approach to reduce the 1/f noise levels in the MOSFETs on varied silicon orientations, such as Si(lOO) and (110) surfaces, has been carried out. We focus on the Accumulation-mode (AM) FD-SOl device structure and demonstrate that the 1/f noise levels in this AM FD-SOl MOSFETs are obviously reduced on both the Si(lOO) and (110) surfaces.

本文言語English
ホスト出版物のタイトルNoise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009
ページ337-340
ページ数4
DOI
出版ステータスPublished - 2009
イベント20th International Conference on Noise and Fluctuations, ICNF 2009 - Pisa, Italy
継続期間: 2009 6 142009 6 19

出版物シリーズ

名前AIP Conference Proceedings
1129
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other20th International Conference on Noise and Fluctuations, ICNF 2009
国/地域Italy
CityPisa
Period09/6/1409/6/19

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Suppression of 1/f noise in accumulation mode FD-SOI MOSFETs on Si(lOO) and (110) surfaces」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル