Suppressing Vt and Gm variability of FinFETs using amorphous metal gates for 14 nm and beyond

Takashi Matsukawa, Yongxun Liu, Wataru Mizubayashi, Junichi Tsukada, Hiromi Yamauchi, Kazuhiko Endo, Yuki Ishikawa, Shin Ichi O'Uchi, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Meishoku Masahara

研究成果: Conference contribution

10 被引用数 (Scopus)

抄録

Amorphous TaSiN metal gates (MGs) are successfully introduced in FinFETs to suppress work function variation (WFV) of the MG, which is a dominant contributor to threshold voltage (Vt) variability of the undoped channel MG FinFETs. Comparing with a poly-crystalline TiN gate, the TaSiN gate reduces Vt variation drastically and records the smallest A Vt value of 1.34 mVμm reported so far for MG FinFETs. Interface traps also become a dominant AVt origin in the case of well-suppressed WFV using the amorphous M G. The WFV suppression is also effective to reduce trans-conductance (Gm) variability which will be a dominant source of on-current (Ion) variability in 14 nm technology and beyond.

本文言語English
ホスト出版物のタイトル2012 IEEE International Electron Devices Meeting, IEDM 2012
DOI
出版ステータスPublished - 2012 12 1
外部発表はい
イベント2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
継続期間: 2012 12 102012 12 13

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/12/1012/12/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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