Ferromagnetic semiconductor (Ga,Mn)As-based superlattice and multilayer structures, (Ga,Mn)As/(Al,Ga)As and (Ga,Mn)As/(In,Ga)As, were prepared by molecular beam epitaxy. X-ray diffraction measurements showed that the thickness and alloy composition in the superlattices were well controlled. Magnetotransport measurements revealed the existence of ferromagnetic order at low temperatures. Resonant tunneling diodes with (Ga,Mn)As showed features that are well explained by a simple physical picture.
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