Superior coefficient of two-dimensional electron gas in an In0.52Al0.48As/In0.53Ga0.47As modulation-doped structure by inserting a strained InAs quantum well

Tatsushi Akazaki, Junsaku Nitta, Hideaki Takayanagi, Takatomo Enoki, Kunihiro Arai

研究成果: Conference article査読

抄録

A detailed analysis based on Shubnikov-de Haas measurement was made on the effective mass of a two dimensional electron gas (2DEG)in an InAs-inserted channel InAlAs/InGaAs modulation-doped (MD) structure. The measured effective mass of the InAs-inserted channel inverted MD structure was found to be 0.044 m0 when ns = 2.08×1012 cm-2. The effective mass of 2DEG in the InAs-inserted channel MD structure agreed well with the calculated value of the strained InAs layers on In0.53Ga0.47As. This indicated that almost all of the 2DEG formed in the strained InAs quantum well. The InAs-inserted channel MD structure improved the electron confinement, since the 2DEG was confined in the InAs quantum well having a thickness of 4 nm.

本文言語English
ページ(範囲)404-407
ページ数4
ジャーナルConference Proceedings - International Conference on Indium Phosphide and Related Materials
出版ステータスPublished - 1995 1 1
外部発表はい
イベントProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
継続期間: 1995 5 91995 5 13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

フィンガープリント

「Superior coefficient of two-dimensional electron gas in an In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As modulation-doped structure by inserting a strained InAs quantum well」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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