Superconducting structures on narrow-gap semiconductors

H. Takayanagi, T. Akazaki, Junsaku Nitta

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Nb/n-type InAs/Nb superconducting devices with oxide-free interfaces are fabricated to study the interface effect on the superconducting characteristics of the device. The maximum supercurrent as well as the maximum supercurrent-normal resistance product is enhanced by RF sputter cleaning of the InAs surface. Using a device where Nb is deposited on InAs without breaking the vacuum, the carrier concentration dependence of the proximity-effect-induced pair potential is obtained. This dependence is consistent with the theory if some assumptions are made.

本文言語English
論文番号094
ジャーナルSemiconductor Science and Technology
8
1S
DOI
出版ステータスPublished - 1993 12月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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