抄録
Nb/n-type InAs/Nb superconducting devices with oxide-free interfaces are fabricated to study the interface effect on the superconducting characteristics of the device. The maximum supercurrent as well as the maximum supercurrent-normal resistance product is enhanced by RF sputter cleaning of the InAs surface. Using a device where Nb is deposited on InAs without breaking the vacuum, the carrier concentration dependence of the proximity-effect-induced pair potential is obtained. This dependence is consistent with the theory if some assumptions are made.
| 本文言語 | English |
|---|---|
| 論文番号 | 094 |
| ジャーナル | Semiconductor Science and Technology |
| 巻 | 8 |
| 号 | 1S |
| DOI | |
| 出版ステータス | Published - 1993 12月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学
- 材料化学