Sulfur-doping of rutile-titanium dioxide by ion implantation: Photocurrent spectroscopy and first-principles band calculation studies

T. Umebayashi; T. Yamaki; S. Yamamoto; A. Miyashita; S. Tanaka; T. Sumita; K. Asai

doi:10.1063/1.1565693

Sulfur-doping of rutile-titanium dioxide by ion implantation: Photocurrent spectroscopy and first-principles band calculation studies

T. Umebayashi, T. Yamaki, S. Yamamoto, A. Miyashita, S. Tanaka, T. Sumita, K. Asai

研究成果: Article › 査読

316 被引用数 (Scopus)

抄録

Ion implantation and thermal annealing were used to in the synthesis of sulfur (S)-doped titanium oxide (TiO₂). The irradiation damage was found to recovered by annealing at 600°C in air, according to the results of Rutherford backscattering spectroscopy and ion channeling analysis. The photon-to-carrier conversion was induced during irradiation by visible light above 420 nm.

本文言語	English
ページ（範囲）	5156-5160
ページ数	5
ジャーナル	Journal of Applied Physics
巻	93
号	9
DOI	https://doi.org/10.1063/1.1565693
出版ステータス	Published - 2003 5月 1
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（全般）

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10.1063/1.1565693

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引用スタイル

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