Sulfur-doping of rutile-titanium dioxide by ion implantation: Photocurrent spectroscopy and first-principles band calculation studies

T. Umebayashi, T. Yamaki, S. Yamamoto, A. Miyashita, S. Tanaka, T. Sumita, K. Asai

研究成果: Article査読

316 被引用数 (Scopus)

抄録

Ion implantation and thermal annealing were used to in the synthesis of sulfur (S)-doped titanium oxide (TiO2). The irradiation damage was found to recovered by annealing at 600°C in air, according to the results of Rutherford backscattering spectroscopy and ion channeling analysis. The photon-to-carrier conversion was induced during irradiation by visible light above 420 nm.

本文言語English
ページ(範囲)5156-5160
ページ数5
ジャーナルJournal of Applied Physics
93
9
DOI
出版ステータスPublished - 2003 5月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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