Successful growth of inxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation

Yukinaga Azuma, Yoshito Nishijima, Kazuo Nakajima, Noritaka Usami, Kozo Fujiwara, Toru Ujihara

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We attempted to utilize a GaAs single crystal with preferential orientation as a seed to obtain an InGaAs single bulk crystal. The preferential orientation of the InGaAs bulk crystal was determined as [110] in a preliminary experiment to utilize multiple seed crystals with random orientations. By subsequent zone growth of InGaAs on GaAs(110), an IsxGa1-xAs (x > 0.18) single bulk crystal with a diameter of 15mm and a length of 13mm was successfully obtained on the seed without a compositionally graded InGaAs layer. The large lattice mismatch between GaAs and InGaAs was likely to be accommodated by an array of thin columnar grains at the interface.

本文言語English
ページ(範囲)L907-L909
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
43
7 A
DOI
出版ステータスPublished - 2004 7月 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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