TY - GEN
T1 - Substrate orientation dependence of first- And second-oxide-layer growth kinetics
T2 - 2004 International Microprocesses and Nanotechnology Conference
AU - Ogawa, Shuichi
AU - Takakuwa, Yuji
PY - 2004/12/1
Y1 - 2004/12/1
N2 - The growth kinetics of first-and second-oxide layer was compared between Si(001)2×1 and Si(111)7×7 surfaces to clarify the substrate orientation dependence of the oxidation reaction on Si surfaces. Reflection high energy electron diffraction combined with Auger electron spectroscopy (RHEED-AES) was also employed to observe the oxide coverage and surface morphology in real time during oxidation. On the Si(001)2×1 surface, the Auger electron intensity increases rapidly to about 300 s and then considerably slows down its increase rate. The gradual increase of indicates that growth of second-oxide layer professes gradually following the first-oxide layer growth by Langmuir type adsorption.
AB - The growth kinetics of first-and second-oxide layer was compared between Si(001)2×1 and Si(111)7×7 surfaces to clarify the substrate orientation dependence of the oxidation reaction on Si surfaces. Reflection high energy electron diffraction combined with Auger electron spectroscopy (RHEED-AES) was also employed to observe the oxide coverage and surface morphology in real time during oxidation. On the Si(001)2×1 surface, the Auger electron intensity increases rapidly to about 300 s and then considerably slows down its increase rate. The gradual increase of indicates that growth of second-oxide layer professes gradually following the first-oxide layer growth by Langmuir type adsorption.
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M3 - Conference contribution
AN - SCOPUS:23244468342
SN - 4990247205
T3 - Digest of Papers - Microprocesses and Nanotechnology 2004
SP - 44
EP - 45
BT - Digest of Papers - Microprocesses and Nanotechnology 2004
Y2 - 26 October 2004 through 29 October 2004
ER -