Substrate orientation dependence of first- And second-oxide-layer growth kinetics: Comparison between Si(001)2 × 1 and Si(111)7 × 7 surfaces

研究成果: Conference contribution

抄録

The growth kinetics of first-and second-oxide layer was compared between Si(001)2×1 and Si(111)7×7 surfaces to clarify the substrate orientation dependence of the oxidation reaction on Si surfaces. Reflection high energy electron diffraction combined with Auger electron spectroscopy (RHEED-AES) was also employed to observe the oxide coverage and surface morphology in real time during oxidation. On the Si(001)2×1 surface, the Auger electron intensity increases rapidly to about 300 s and then considerably slows down its increase rate. The gradual increase of indicates that growth of second-oxide layer professes gradually following the first-oxide layer growth by Langmuir type adsorption.

本文言語English
ホスト出版物のタイトルDigest of Papers - Microprocesses and Nanotechnology 2004
ページ44-45
ページ数2
出版ステータスPublished - 2004 12月 1
イベント2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
継続期間: 2004 10月 262004 10月 29

出版物シリーズ

名前Digest of Papers - Microprocesses and Nanotechnology 2004

Other

Other2004 International Microprocesses and Nanotechnology Conference
国/地域Japan
CityOsaka
Period04/10/2604/10/29

ASJC Scopus subject areas

  • 工学(全般)

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