Substrate bonding at low temperature by using plasma activated porous gold

Wei Shan Wang, Yu Ching Lin, Thomas Gessner, Masayoshi Esashi

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Porous gold with porosity in nanoscale which indicates a highly reactive surface has shown its potential for low temperature bonding. Recently, thermo-compression bonding between nanoporous gold (NPG) and gold film at 200°C has been reported. In this study, with plasma activation, silicon chips with Au film and nanoporous gold structure respectively bonded at room temperature is demonstrated. First, nanoporous gold is fabricated by electrodeposition of gold-tin alloy, followed by chemical dealloying where the Sn component is removed. Then, with Ar plasma treatment, two silicon chips, one side with sputtered Au film and the other with nanoporous gold, are bonded face to face in ambient air. Bonding temperature starting from 150°C down to room temperature are achieved. Results show that by combining plasma activation and nanoporous gold structure, the bonding temperature can be reduced dramatically and is able to be applied to MEMS/sensor packaging technologies.

本文言語English
ホスト出版物のタイトルIEEE SENSORS 2012 - Proceedings
DOI
出版ステータスPublished - 2012 12 1
イベント11th IEEE SENSORS 2012 Conference - Taipei, Taiwan, Province of China
継続期間: 2012 10 282012 10 31

出版物シリーズ

名前Proceedings of IEEE Sensors

Other

Other11th IEEE SENSORS 2012 Conference
CountryTaiwan, Province of China
CityTaipei
Period12/10/2812/10/31

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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