Sub-1-V-60nm vertical body channel MOSFET-based six-transistor static random access memory array with wide noise margin and excellent power delay product and its optimization with the cell ratio on static random access memory cell

Ryosuke Ogasawara, Tetsuo Endoh

研究成果: Article査読

フィンガープリント

「Sub-1-V-60nm vertical body channel MOSFET-based six-transistor static random access memory array with wide noise margin and excellent power delay product and its optimization with the cell ratio on static random access memory cell」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

Physics & Astronomy

Engineering & Materials Science