Sub-μm wide channels with surface potential compensated by focused Si ion beam implantation

Toshimasa Fujisawa, Tadashi Saku, Yoshiro Hirayama, Seigo Tarucha

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We propose and demonstrate a novel technique using focused Si ion beam implantation to produce high-quality mesoscopic channels. Low-energy Si implantation compensates the surface potential of a modulation-doped heterostructure that is designed to have no conductive channels at the heterointerface. The implantation forms a conductive channel separated from the damaged implanted region. The mobility of the channel is improved by decreasing the ion energy from 100 to 35 keV. Sub-μm to 5 μm wide channels fabricated by 35 keV Si+ ions show a mobility of 5.3×105 cm2/V s and a ballistic length of 3.1 μm at 1.5 K.

本文言語English
ページ(範囲)51-53
ページ数3
ジャーナルApplied Physics Letters
63
1
DOI
出版ステータスPublished - 1993
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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