Study on stress generation mechanism during oxidation of shallow-groove-isolation structure for semiconductor devices

Norio Ishitsuka; Hideo Miura; Naoto Saito; Yasuko Yoshida; Norio Suzuki; Suji Ikeda

doi:10.1299/kikaia.69.932

Study on stress generation mechanism during oxidation of shallow-groove-isolation structure for semiconductor devices

Norio Ishitsuka, Hideo Miura, Naoto Saito, Yasuko Yoshida, Norio Suzuki, Suji Ikeda

研究成果: Article › 査読

1 被引用数 (Scopus)

抄録

Using a finite element method analyzed the mechanism of stress development during thermal oxidation of shallow grooves on the top of silicon substrates for 0.25-μm semiconductor devices. The resolved shear stress concentrated at the upper and lower corners of the substrates. The shear stress increased as the total amount of oxidation increased. The shear stress at the lower corner was about two times higher than that at the upper corner because of a three-dimensional effect. The stress at both corners strongly depended on the width of the silicon substrate and the oxidation temperature.

本文言語	English
ページ（範囲）	932-938
ページ数	7
ジャーナル	Nippon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
巻	69
号	5
DOI	https://doi.org/10.1299/kikaia.69.932
出版ステータス	Published - 2003 5月
外部発表	はい

ASJC Scopus subject areas

材料科学（全般）
材料力学
機械工学

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10.1299/kikaia.69.932

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abstract = "Using a finite element method analyzed the mechanism of stress development during thermal oxidation of shallow grooves on the top of silicon substrates for 0.25-μm semiconductor devices. The resolved shear stress concentrated at the upper and lower corners of the substrates. The shear stress increased as the total amount of oxidation increased. The shear stress at the lower corner was about two times higher than that at the upper corner because of a three-dimensional effect. The stress at both corners strongly depended on the width of the silicon substrate and the oxidation temperature.",

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author = "Norio Ishitsuka and Hideo Miura and Naoto Saito and Yasuko Yoshida and Norio Suzuki and Suji Ikeda",

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T1 - Study on stress generation mechanism during oxidation of shallow-groove-isolation structure for semiconductor devices

AU - Ishitsuka, Norio

AU - Miura, Hideo

AU - Saito, Naoto

AU - Yoshida, Yasuko

AU - Suzuki, Norio

AU - Ikeda, Suji

PY - 2003/5

Y1 - 2003/5

N2 - Using a finite element method analyzed the mechanism of stress development during thermal oxidation of shallow grooves on the top of silicon substrates for 0.25-μm semiconductor devices. The resolved shear stress concentrated at the upper and lower corners of the substrates. The shear stress increased as the total amount of oxidation increased. The shear stress at the lower corner was about two times higher than that at the upper corner because of a three-dimensional effect. The stress at both corners strongly depended on the width of the silicon substrate and the oxidation temperature.

AB - Using a finite element method analyzed the mechanism of stress development during thermal oxidation of shallow grooves on the top of silicon substrates for 0.25-μm semiconductor devices. The resolved shear stress concentrated at the upper and lower corners of the substrates. The shear stress increased as the total amount of oxidation increased. The shear stress at the lower corner was about two times higher than that at the upper corner because of a three-dimensional effect. The stress at both corners strongly depended on the width of the silicon substrate and the oxidation temperature.

KW - Finite Element Method

KW - Oxidation

KW - Semiconductor

KW - Structural Analysis

KW - Visco Elasticity

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JO - Nihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A

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Study on stress generation mechanism during oxidation of shallow-groove-isolation structure for semiconductor devices

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