Study on stress generation mechanism during oxidation of shallow-groove-isolation structure for semiconductor devices

Norio Ishitsuka, Hideo Miura, Naoto Saito, Yasuko Yoshida, Norio Suzuki, Suji Ikeda

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Using a finite element method analyzed the mechanism of stress development during thermal oxidation of shallow grooves on the top of silicon substrates for 0.25-μm semiconductor devices. The resolved shear stress concentrated at the upper and lower corners of the substrates. The shear stress increased as the total amount of oxidation increased. The shear stress at the lower corner was about two times higher than that at the upper corner because of a three-dimensional effect. The stress at both corners strongly depended on the width of the silicon substrate and the oxidation temperature.

本文言語English
ページ(範囲)932-938
ページ数7
ジャーナルNippon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
69
5
DOI
出版ステータスPublished - 2003 5月
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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