Using a finite element method analyzed the mechanism of stress development during thermal oxidation of shallow grooves on the top of silicon substrates for 0.25-μm semiconductor devices. The resolved shear stress concentrated at the upper and lower corners of the substrates. The shear stress increased as the total amount of oxidation increased. The shear stress at the lower corner was about two times higher than that at the upper corner because of a three-dimensional effect. The stress at both corners strongly depended on the width of the silicon substrate and the oxidation temperature.
|ジャーナル||Nippon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A|
|出版ステータス||Published - 2003 5月|
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